Reduction Mechanism in the Dielectric Constant of Fluorine‐Doped Silicon Dioxide Film-Reference-Cited by-同舟云学术

Reduction Mechanism in the Dielectric Constant of Fluorine‐Doped Silicon Dioxide Film

Published:1997-07-01 Issue:7 Volume:144 Page:2531-2537
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Lim Sang Woo¹,Shimogaki Yukihiro¹,Nakano Yoshiaki²,Tada Kunio²,Komiyama Hiroshi¹

Affiliation:

1. Department of Chemical System Engineering, University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 113, Japan

2. Department of Electronic Engineering, University of Tokyo, 7‐3‐1 Hongo, Bunkyo‐ku, Tokyo 113, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837850/pdf

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring Auger Recombination Dynamics in CsPbI₃ Perovskite Nanocrystals via Transition Metal Doping;Nano Letters;2024-06-27

2. Review of methods for the mitigation of plasma‐induced damage to low‐dielectric‐constant interlayer dielectrics used for semiconductor logic device interconnects;Plasma Processes and Polymers;2019-06-27

3. Polarization behavior of polyvinylidene fluoride films with the addition of reduced graphene oxide;Journal of Industrial and Engineering Chemistry;2018-11

4. Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-03

5. Characterization and versatile applications of low hydrogen content SiOCN grown by plasma-enhanced chemical vapor deposition;Journal of Applied Physics;2014-09-14