Effect of Driving Frequency on Growth and Structure of Silicon Films Deposited by Radio-Frequency and Very-High-Frequency Magnetron Sputtering
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Passivation of nanocrystalline silicon photovoltaic materials employing a negative substrate bias
2. Nanocrystalline silicon films directly made by pulsed-DC magnetron sputtering
3. Dual comb-type electrodes as a plasma source for very high frequency plasma enhanced chemical vapor deposition
4. Deposition of microcrystalline intrinsic silicon by the Electrical Asymmetry Effect technique
5. Development of microcrystalline silicon thin films with high deposition rate (over 10nm/s) using VHF hollow electrode enhanced glow plasma
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2. Effect of radio-frequency substrate bias on ion properties and sputtering behavior of 2 MHz magnetron sputtering;Plasma Science and Technology;2018-11-13
3. Ion property and electrical characteristics of 60 MHz very-high-frequency magnetron discharge at low pressure;Plasma Science and Technology;2018-08-20
4. In Situ Plasma Monitoring of PECVD nc-Si:H Films and the Influence of Dilution Ratio on Structural Evolution;Coatings;2018-07-06
5. Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering;Chinese Physics B;2017-08
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