In Situ Plasma Monitoring of PECVD nc-Si:H Films and the Influence of Dilution Ratio on Structural Evolution
Author:
Publisher
MDPI AG
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces
Link
http://www.mdpi.com/2079-6412/8/7/238/pdf
Reference45 articles.
1. Crystalline silicon surface passivation by intrinsic silicon thin films deposited by low-frequency inductively coupled plasma
2. Optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by rf-PECVD
3. Effect of hydrogen plasma treatment on the surface morphology, microstructure and electronic transport properties of nc-Si:H
4. Influence of annealing temperature on the properties of polycrystalline silicon films formed by rapid thermal annealing of a-Si:H films
5. Nanocrystalline silicon solar cells from excimer laser crystallization of amorphous silicon
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