Optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by rf-PECVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference42 articles.
1. Nanostructural and optical features of hydrogenated nanocrystalline silicon films prepared by aluminium-induced crystallization
2. Control of the initial stage of nanocrystallite silicon growth monitored by in-situ spectroscopic ellipsometry
3. Electronic and topographic properties of amorphous and microcrystalline silicon thin films
4. Effect of power on the growth of nanocrystalline silicon films
5. Highly reflective nc-Si:H/a-CNx:H multilayer films prepared by r.f. PECVD technique
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1. Optimal H2-dilution playing key role in accomplishing significant nanocrystallinity with both Si and Ge moieties in SiGe nanocomposite thin film network;Applied Surface Science;2022-09
2. Improving structural, optical, and electrical properties of μc-Si:H using non-uniform hydrogen dilution treatment on RF-PECVD prepared layers;Materials Science in Semiconductor Processing;2021-07
3. Growth of crystalline silicon by a seed layer approach using plasma enhanced chemical vapor deposition;Physica B: Condensed Matter;2021-05
4. Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering;Coatings;2021-02-09
5. Evolution of a-Si:H to nc-Si:H transition of hydrogenated silicon films deposited by trichlorosilane using principle component analysis of optical emission spectroscopy;Materials Chemistry and Physics;2020-01
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