Author:
Soo Park Beom,Yim Dong Kil,Cho Seon-Mee,Choi Soo Young,White John M.
Abstract
IGZO is one of the promising materials being used to make high-mobility TFTs for high-quality displays. However, a-IGZO TFTs have stability issues in addition to limited mobility (<10 cm2/V·s). AKT has made a stable a-IGZO TFT through ESL optimization and plasma treatment of the IGZO interface. AKT a-IGZO ES-TFT shows SS 0.4 ±0.1 V/dec, mobility 10 ±1.0 cm2/V·s, Von 0.25 ± 1.5V over 2200 x 2500 mm2 substrate. BTS stability range under 80oC, ±50V conditions is ~1.5V. Furthermore, another AKT MO ES-TFT shows >30 cm2/V·s mobility using multi-layer structure.
Publisher
The Electrochemical Society
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献