P‐1.10: The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs-Reference-Cited by-同舟云学术

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P‐1.10: The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Published:2022-10 Issue:S1 Volume:53 Page:600-602
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:Symp Digest of Tech Papers

Author:

Zhang Guangchen¹,Yu Zhinong¹,Dong Junchen²,Li Qi³,Wang Yi³,Han Dedong³

Affiliation:

1. School of Optics and Photonics Beijing Institute of Technology Beijing China

2. School of Information & Communication Engineering Beijing Information Science and Technology University Beijing China

3. Institute of Microelectronics Peking University Beijing China

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.16036

Reference13 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances;Fortunato E.;Advanced Materials,2012

2. Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors;Kang Y;Materials Research Bulletin,2021

3. Novel Integration Process for IGZO MO-TFT Fabrication on Gen 8.5 PECVD and PVD Systems - A Quest to Improve TFT Stability and Mobility;Soo Park B;ECS Transactions,2013

4. Transparent and conducting ITO films: new developments and applications;Granqvist C;Thin Solid Films,2002

5. Nanometre-thin indium tin oxide for advanced high-performance electronics;Li S;Nature Materials,2019

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