Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors-Reference-Cited by-同舟云学术

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

Published:2006 Issue:2 Volume:153 Page:G164
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Cuong Nguyen Duy,Kim Dong-Jin,Kang Byoung-Don,Kim Chang Soo,Yu Kwang-Min,Yoon Soon-Gil

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+–p junction diodes

2. Diffusion barrier property of TaN between Si and Cu

3. Manufacture and properties of ceramic cutting tools: a review

4. Preparation, structure and properties of TaN and TaC films obtained by ion beam assisted deposition

5. Thin-film tantalum-nitride resistor technology for phosphide-based optoelectronics

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