Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering-Reference-Cited by-同舟云学术

Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering

Published:2019 Issue:10 Volume:8 Page:P553-P556
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Liu Chien^ORCID,Tung Yi-Chun,Tseng Chih-Yang,Wang Wei-Chun,Chen Hsuan-Han,Lee Tsung-Ming,Chou Wu-Ching,Zheng Zhi-Wei^ORCID,Cheng Chun-Hu,Hsu Hsiao-Hsuan

Funder

National Science Council Taiwan

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

2. Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

4. Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG

5. Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric

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