Author:
Ventosa Caroline,Rieutord François,Libralesso Laure,Fournel Frank,Morales Christophe,Moriceau H.
Abstract
The effect of annealing prior to Silicon-Silicon direct bonding is investigated. It is shown that this thermal treatment densifies and increases the thickness of the native oxide, which becomes essentially water-tight. Hence, the evolution of the bonding interface upon post-bonding annealing is significantly altered.
Publisher
The Electrochemical Society
Cited by
4 articles.
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