Deposition of Tin Oxide into Porous Silicon by Atomic Layer Epitaxy-Reference-Cited by-同舟云学术

Deposition of Tin Oxide into Porous Silicon by Atomic Layer Epitaxy

Published:1996-02-01 Issue:2 Volume:143 Page:683-687
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Dücsö Csaba¹²,Khanh Nguyen Quoc¹²,Horváth Zsolt¹²,Bársony István¹²,Utriainen Mikko¹²,Lehto Sari¹²,Nieminen Minna¹²,Niinistö Lauri¹²

Affiliation:

1. Research Institute for Materials Science—ATKI, H‐1525 Budapest, Hungary

2. Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN‐02150 Espoo, Finland

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1836500/pdf

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