Influence of O2Gas on Etch Profile of Magnetic Tunnel Junction Stacks Etched in a CH4/O2/Ar Plasma
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays
2. Progress and outlook for MRAM technology
3. Recent developments in magnetic tunnel junction MRAM
4. Magnetic tunnel junctions
5. Chemically assisted sputter etching of permalloy using CO or CL2
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1. Etch Characteristics of Nanoscale Patterned Magnetic Tunnel Junction Stacks Using Pulse-Modulated Radio Frequency Source Plasma;Journal of Nanoscience and Nanotechnology;2020-08-01
2. In situ XPS study on atomic layer etching of Fe thin film using Cl2 and acetylacetone;Journal of Vacuum Science & Technology A;2018-09
3. Etch characteristics of Ru thin films using O2/Ar, CH4/Ar, and O2/CH4/Ar plasmas;Thin Solid Films;2016-09
4. Inductively Coupled Plasma Reactive Ion Etching of Magnetic Tunnel Junction Stacks in a CH3COOH/Ar Gas;ECS Solid State Letters;2015-08-12
5. Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma;Korean Journal of Chemical Engineering;2014-11-23
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