Etch Characteristics of Nanoscale Patterned Magnetic Tunnel Junction Stacks Using Pulse-Modulated Radio Frequency Source Plasma
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Published:2020-08-01
Issue:8
Volume:20
Page:5131-5137
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Lee Jae Yong1,
Lim Eun Tack1,
Ryu Jin Su1,
Choi Jae Sang1,
Chung Chee Won1
Affiliation:
1. Department of Chemistry and Chemical Engineering, Center for Design and Applications of Molecular Catalysts, Inha University, 100 Inharo, Michuhol-Gu, Incheon 22212, Korea
Abstract
Magnetic tunnel junctions (MTJs) patterned with 70 × 70 nm2 square arrays were etched in a CH4/O2/Ar gas mixture by pulse-modulated inductively coupled plasma reactive ion etching (ICPRIE). A good etch profile of MTJs with etch slope of approximately
82° was achieved by adjusting the on–off duty ratio of the plasma and pulse frequency. Langmuir probe analysis and optical emission spectroscopy confirmed that the balance between the formation of the passivation layer as an etch byproduct and sputtering effect is responsible for
the etch selectivity and etch profile with a high degree of anisotropy. It is concluded that the application of pulse-modulated plasma on ICPRIE can be an effective method to obtain the anisotropic etch profile of nanometer-scale MTJs.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering