Author:
Nakatsuka Osamu,Taoka Noriyuki,Asano Takanori,Yamaha Takashi,Kurosawa Masashi,Sakashita Mitsuo,Zaima Shigeaki
Abstract
We have examined the heteroepitaxial growth of Ge1-xSnx and Ge1-x-ySixSny layers and investigated the crystalline and electrical properties of these Sn-related group-IV material thin films. We achieved the epitaxial growth of Ge1-xSnx on Ge(110) with suppressing the formation of twin defects. Ge1-x-ySixSny layers on Ge substrates show high thermal robustness without Sn precipitation even after annealing at 600°C. We also found that the incorporation of 0.1%-Sn and H2-annealing are effective to reduce the unintentional generation of holes due to the vacancy defects.
Publisher
The Electrochemical Society
Cited by
19 articles.
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