Effects of Metallic Contaminants on the Electrical Characteristics of Ultrathin Gate Oxides-Reference-Cited by-同舟云学术

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Effects of Metallic Contaminants on the Electrical Characteristics of Ultrathin Gate Oxides

Published:2005 Issue:8 Volume:8 Page:G201
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Pan Tung-Ming,Ko Fu-Hsiang,Chao Tien-Sheng,Chen Chieh-Chuang,Chang-Liao Kuei-Shu

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference12 articles.

1. C.Y. Chang and S.M. Sze , ULSI Technology , Chap. 2, McGraw-Hill, New York (1996).

2. Enhancement of Semiconductor Wafer Cleaning by Chelating Agent Addition

3. In Situ Protection of Silicon Wafers Against Metal Contamination in Furnace Processes Without Environmental Hazard

4. Novel One-Step Aqueous Solutions to Replace Pregate Oxide Cleans

5. Impact of copper contamination on the quality of silicon oxides

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