InAs Native Oxides Prepared by Liquid Phase Oxidation Method-Reference-Cited by-同舟云学术

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InAs Native Oxides Prepared by Liquid Phase Oxidation Method

Published:2010 Issue:11 Volume:157 Page:G230
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Lin Hsien-Cheng,Lee Kuan-Wei,Hsieh Chia-Hong,Cheng Yu-Chun,Wang Yeong-Her

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A Review of the Electrical and Optical Properties of III–V Compound Semiconductor Films

2. High temperature InAs infrared detector based on metal-insulator-semiconductor structure

3. Backside‐illuminated InAsSb/GaSb broadband detectors

4. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

5. Characterization of AuGe‐ and AuTe‐Based Ohmic Contacts on InAs n‐Channel High Electron Mobility Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric;Solid-State Electronics;2012-02

2. Characteristics of InGaP∕InGaAs MOS-PHEMT with Liquid Phase–Oxidized GaAs Gate Dielectric;Journal of The Electrochemical Society;2011

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