InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric-Reference-Cited by-同舟云学术

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InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric

Published:2012-02 Issue: Volume:68 Page:27-31
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lin Hsien-Cheng,Lee Fang-Ming,Cheng Yu-Chun,Lee Kuan-Wei,Adriyanto Feri,Wang Yeong-Her

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Model for the temperature dependence of the threshold voltage of modulation-doped field-effect transistors

2. Two-dimensional electron gas at a semiconductor-semiconductor interface

3. Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K

4. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

5. High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In0.49Ga0.51P/GaAs Heteroepitaxial Films;ACS Applied Materials & Interfaces;2018-01-05

2. Surface topography analysis with application of roughness area dependence method;Ultramicroscopy;2016-11

3. Composite HfO2/Al2O3-dielectric AlGaAs/InGaAs MOS-HEMTs by using RF sputtering/ozone water oxidation;Superlattices and Microstructures;2014-08

4. The Microwave Characteristics of an In 0.4 Ga 0.6 As Metal-Oxide-Semiconductor Field-Effect Transistor with an In 0.49 Ga 0.51 P Interfacial Layer;Chinese Physics Letters;2013-08

5. Effect of the Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown on semi-insulating GaAs substrates;Chinese Physics B;2013-07

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