Clean-Induced Instability of Electrical Characteristics in Poly-Si Junctionless Nanowire Transistor-Reference-Cited by-同舟云学术

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Clean-Induced Instability of Electrical Characteristics in Poly-Si Junctionless Nanowire Transistor

Published:2017 Issue:7 Volume:6 Page:N83-N86
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Kang Tsung-Kuei,Chen Wei-Hao,Liu Han-Wen,Chien Feng-Tso,Lin Cheng-Li,Wang Fang-Hsing

Funder

Ministry of Science and technology (R.O.C)

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Performance Comparison Between Bulk and SOI Junctionless Transistors

2. Reduced electric field in junctionless transistors

3. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

4. Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel

5. Junctionless multigate field-effect transistor

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drain Conductance Oscillations in Poly-Si Junctionless Nanowire Thin-Film Transistors;IEEE Transactions on Electron Devices;2019-01

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