Performance Comparison Between Bulk and SOI Junctionless Transistors-Reference-Cited by-同舟云学术

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Performance Comparison Between Bulk and SOI Junctionless Transistors

Published:2013-02 Issue:2 Volume:34 Page:169-171
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Han Ming-Hung,Chang Chun-Yen,Chen Hung-Bin,Wu Jia-Jiun,Cheng Ya-Chi,Wu Yung-Chun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6417986/06407737.pdf?arnumber=6407737

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Channel Grading on Triple Material Double Gate Stack Oxide SON MOSFET;Advances in Communication, Devices and Networking;2023

2. Performance Analysis of Junctionless and Inversion Mode Trigate SOI FinFET at 20nm Gate Length;2022 IEEE International Symposium on Smart Electronic Systems (iSES);2022-12

3. Junctionless FETs based on a silicon-on-insulator architecture with a buried metal fin for multi-threshold operation;Journal of Computational Electronics;2022-09-27

4. Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor;Semiconductor Science and Technology;2022-09-08

5. Improved Switching Current Ratio with Workfuncion Modulated Junctionless FinFET;Silicon;2022-06-22

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