Improved Switching Current Ratio with Workfuncion Modulated Junctionless FinFET
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01969-0.pdf
Reference37 articles.
1. Nayak D, Acharya DP, Mahapatra K (2017) A read disturbance free differential read SRAM cell for low power and reliable cache in embedded processor. AEU-Int J Electron Commun 74:192–197. https://doi.org/10.1016/j.aeue.2017.02.012
2. Gupta A, Mathur R, Nizamuddin M (2019) Design, simulation, and comparative analysis of a novel FinFET based astable multivibrator. AEU-Internat J Electron Commun 100:163–171. https://doi.org/10.1016/j.aeue.2018.12.007
3. Suzuki K, Tanaka T, Tosaka Y, Horie H, Arimoto Y (1993) Scaling theory for double-gate SOI MOSFET’s. IEEE Trans Electron Devices 40(12):2326–2329. https://doi.org/10.1109/16.249482
4. Suzuki E, Ishii K, Kanemaru S, Maeda T, Tsutsumi T, Sekigawa T, Kiyoko N, Hiroshima H Highly suppressed short-channel effects in ultrathin SOI n-MOSFET’s. IEEE Transactions Electron Devices 47(2):354–359. https://doi.org/10.1109/16.822280
5. Breed A, Roenker KP (2005) Comparison of the scaling characteristics of nanoscale silicon N-channel multiple-gate MOSFETs. In 48th Midwest Symposium on Circuits and Systems, 603–6 IEEE. https://doi.org/10.1109/MWSCAS.2005.1594173
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