Preparation of Mono-Layered Ag Nanoparticles for Charge-Trap Sites of Memory Thin-Film Transistors Using In-Ga-Zn-O Channel-Reference-Cited by-同舟云学术

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Preparation of Mono-Layered Ag Nanoparticles for Charge-Trap Sites of Memory Thin-Film Transistors Using In-Ga-Zn-O Channel

Published:2016-12-22 Issue:1 Volume:6 Page:Q18-Q22
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Park Min-Ji,Jeong Sunho,Hong Gyu Ri,Kim Sohee,Kim Yun Ho,Choi Youngmin,Yoon Sung-Min

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

2. Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step

3. Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

4. High-performance transparent, all-oxide nonvolatile charge trap memory transistor using In-Ga-Zn-O channel and ZnO trap layer

5. High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium–Gallium–Zinc–Oxide Thin-Film Transistor

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanically Flexible Nonvolatile Memory Thin‐Film Transistors Using Oxide Semiconductor Active Channels on Ultrathin Polyimide Films;Amorphous Oxide Semiconductors;2022-05-20

2. Synergic Impacts of CF₄ Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO₂ Charge Trap and In–Ga–Zn–O Active Channel Layers;ACS Applied Electronic Materials;2022-03-07

3. Mechanically Robust and Highly Flexible Nonvolatile Charge‐Trap Memory Transistors Using Conducting‐Polymer Electrodes and Oxide Semiconductors on Ultrathin Polyimide Film Substrates;Advanced Materials Technologies;2019-08-12

4. Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors;Japanese Journal of Applied Physics;2019-04-12

5. Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors;ECS Journal of Solid State Science and Technology;2017

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