1. International Technology Roadmap for Semiconductors 2007, http://www.itrs.net/Links/2007ITRS/2007_Chapters/2007_FEP.pdf, last accessed Dec 21, 2009.
2. I. L. Berry, C. Waldfried, K. Han, S. Luo, R. Sonnemans, and M. Ameen , inEighth International Workshop on Junction Technology, Extended Abstracts, p. 87 (2008).
3. J. Shi, T. Noble, M. DeSarno, S. Fink, D. Shaner, and H. Stants , inThe First International Symposium on Plasma Process-Induced Damage, p. 124 (1996).
4. Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants: Problems and solutions
5. Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation