Optical and photo-carrier characterization of ultra-shallow junctions in silicon
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.1007/s11433-013-5091-8.pdf
Reference20 articles.
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3. Xia J, Mandelis A. Radiative defect state identification in semi-insulating GaAs using photo-carrier radiometry. Semicond Sci Technol, 2009, 24: 125002
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