Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer-Reference-Cited by-同舟云学术

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Cheap Ultra-Wide Bandgap Power Electronics? Gallium Oxide May Hold the Answer

Published:2018 Issue:4 Volume:27 Page:49-52
ISSN:1064-8208
Container-title:The Electrochemical Society Interface
language:en
Short-container-title:Electrochem. Soc. Interface

Author:

Tadjer Marko J.^ORCID

Publisher

The Electrochemical Society

Subject

Electrochemistry

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semi-insulating β-Ga2O3 single crystals through vanadium doping: Growth, Optical and Terahertz characterization;Journal of Crystal Growth;2024-07

2. Review of β-Ga₂O₃ solar-blind ultraviolet photodetector: growth, device, and application;Semiconductor Science and Technology;2024-05-13

3. Analytical model and simulation study of a novel enhancement-mode Ga₂O₃ MISFET realized by p-GaN gate;Semiconductor Science and Technology;2023-07-24

4. Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications;Materials Science and Engineering: B;2023-07

5. Tutorial: Metalorganic chemical vapor deposition of β -Ga2O3 thin films, alloys, and heterostructures;Journal of Applied Physics;2023-06-07

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