Abrasive-Free Polishing of Single-Crystal 4H-SiC with Silica Glass Plates
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Mechanochemical Polishing of Silicon Carbide Single Crystal with Chromium(III) Oxide Abrasive
2. Chemomechanical Polishing of Silicon Carbide
3. Hybrid polishing mechanism of single crystal SiC using mixed abrasive slurry (MAS)
4. Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC
5. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials
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1. Nanosecond laser irradiation assisted chemical mechanical polishing (CMP) process for promoting material removal of single crystal 4H–SiC;Ceramics International;2024-10
2. Hybrid CO2 laser-polishing process for improving material removal of silicon carbide;The International Journal of Advanced Manufacturing Technology;2020-01-03
3. Tribochemical polishing of bulk gallium nitride substrate;Precision Engineering;2019-03
4. Photo-Assisted Chemical Mechanical Polishing of Si Wafer Using Phosphorescent Particles as a Luminescent Agent;ECS Journal of Solid State Science and Technology;2019
5. Research on Si (100) crystal substrate CMP based on FA/O alkaline slurry;Applied Surface Science;2017-10
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