Research on Si (100) crystal substrate CMP based on FA/O alkaline slurry
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference18 articles.
1. Chemical effect on the material removal rate in the CMP of silicon wafers;Wang;Wear,2011
2. Preparation of spherical ceria coated silica nanoparticle abrasives for CMP application;Peedikakkandy;Appl. Surf. Sci.,2015
3. Chemical effects on the tribological behavior during copper chemical mechanical planarization;Li;Mater. Chem. Phys.,2015
4. Role of crystal orientation on chemical mechanical polishing of single crystal copper;Zhu;Appl. Surf. Sci.,2016
5. Mean residence time and dispersion number associated with slurry injection methods in chemical mechanical planarization;Mu;ECS J. Solid Sci. Technol.,2016
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1. Effect of Polyoxyethylene-Based Nonionic Surfactants on Chemical–Mechanical Polishing Performance of Monocrystalline Silicon Wafers;Crystals;2024-05-14
2. Effect of Novel pH Regulators on Copper film Chemical Mechanical Polishing for Ruthenium-Based Copper Interconnect under Weak Alkalinity Conditions;ECS Journal of Solid State Science and Technology;2024-05-01
3. Chemical Effect Mechanism in Chemical Mechanical Polishing of Silicon Wafer;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17
4. Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions;ECS Journal of Solid State Science and Technology;2024-01-01
5. High efficiency chemical mechanical polishing for silicon wafers using a developed slurry;Surfaces and Interfaces;2023-06
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