Author:
Baumann Peter K.,Heuken Michael,Weber Ulrich,Lehnen Peer,Senzaki Yoshi,Lindner Johannes,Lu Brian,Karim Ziaul,Schineller Bernd
Abstract
Multi component films for a range of device applications were deposited by atomic vapor deposition (AVD®). Dysprosium doped HfO2 was studied as a high-k material. All HfDyOx films showed a tegragonal/cubic phase. A Dy concentration of 4% was determined for an optimum increase of the k-value. The material GeSbTe was investigated as a possible candidate for phase change applications. The material was deposited in a wide range of compositions in a controlled fashion. In particular the Ge2Sb2Te5 phase was achieved with good composition, thickness and electrical resistivity uniformity. Gap fill and phase change properties were studied.
Publisher
The Electrochemical Society
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献