Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5(GST)-Reference-Cited by-同舟云学术

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Molecular Precursors for the Phase-Change Material Germanium-Antimony-Telluride, Ge2Sb2Te5(GST)

Published:2017-08-29 Issue:18 Volume:643 Page:1150-1166
ISSN:0044-2313
Container-title:Zeitschrift für anorganische und allgemeine Chemie
language:en
Short-container-title:Z. Anorg. Allg. Chem.

Author:

Harmgarth Nicole¹,Zörner Florian¹,Liebing Phil²,Burte Edmund P.³,Silinskas Mindaugas³,Engelhardt Felix¹,Edelmann Frank T.¹

Affiliation:

1. Chemisches Institut der Otto-von-Guericke-Universität Magdeburg; Universitätsplatz 2 39106 Magdeburg Germany

2. Laboratorium für Anorganische Chemie; ETH Zürich; Vladimir-Prelog-Weg 1-5/10 8093 Zürich Switzerland

3. Institut für Mikro- und Sensorsysteme; Otto-von-Guericke-Universität; Universitätsplatz 2 39106 Magdeburg Germany

Publisher

Wiley

Subject

Inorganic Chemistry

Reference108 articles.

1. Single-molecule precursor chemistry for the deposition of chalcogenide(S or Se)-containing compound semiconductors by MOCVD and related methods

2. MOCVD technology for semiconductors

3. Metalorganic chemical vapor deposition for optoelectronic devices

4. Advanced chemical deposition techniques - from research to production

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4. Atomic layer deposition of chalcogenides for next-generation phase change memory;Journal of Materials Chemistry C;2021

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