High Germanium Content Strained SGOI by Oxidation of Amorphous SiGe Film on SOI Substrates-Reference-Cited by-同舟云学术

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High Germanium Content Strained SGOI by Oxidation of Amorphous SiGe Film on SOI Substrates

Published:2005 Issue:12 Volume:8 Page:G337
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Gao F.,Balakumar S.,Balasubramanian N.,Lee S. J.,Tung C. H.,Kumar R.,Sudhiranjan T.,Foo Y. L.,Kwong D.-L.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference18 articles.

1. Frontiers of silicon-on-insulator

2. T. Tezuka, S. Nakaharai, Y. Moriyama, N. Sugiyama, and S. Takagi , IEEE Symposium in VLSI Technology, Technical Digest , p. 198 (2004).

3. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

4. Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate;Semiconductor Science and Technology;2020-07-29

2. Simulation analysis of electrical characteristics of strained SiGe channel-on-insulator p-MOSFET;Journal of Infrared and Millimeter Waves;2013

3. First-principles study of near surface point defects stability in Si (100) and SiGe(100);Thin Solid Films;2010-02

4. Integration of GaAs epitaxial layer to Si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques;Journal of Applied Physics;2007-09

5. SiGe on Insulator MOSFET Integrated with Schottky Source/Drain and HfO[sub 2]∕TaN Gate Stack;Electrochemical and Solid-State Letters;2006

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