First-principles study of near surface point defects stability in Si (100) and SiGe(100)-Reference-Cited by-同舟云学术

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First-principles study of near surface point defects stability in Si (100) and SiGe(100)

Published:2010-02 Issue:9 Volume:518 Page:2418-2421
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Fetah S.,Chikouche A.,Dkhissi A.,Estève A.,Djafari Rouhani M.,Landa G.,Pochet P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Atomistic modeling of FnVm complexes in pre-amorphized Si

2. Reaction of the Oxygen Molecule at theSi(100)−SiO2Interface During Silicon Oxidation

3. Diffusion of Ge below the Si(100) Surface: Theory and Experiment

4. Strain-driven defect evolution in Sn+ implanted Si/SiGe multilayer structure

5. Impact of germanium on vacancy clustering in germanium-doped silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface effects on the Frenkel pair defects stability in the vicinity of the Si(001) surface;Materials Science in Semiconductor Processing;2015-04

2. Theoretical Modeling of ALD Processes;Atomic Layer Deposition of Nanostructured Materials;2012-01-02

3. Stability of Frenkel pairs in Si(100) surface in the presence of germanium and oxygen atoms;Microelectronic Engineering;2011-04

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