Simulation analysis of electrical characteristics of strained SiGe channel-on-insulator p-MOSFET
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Published:2013
Issue:4
Volume:32
Page:304
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ISSN:1001-9014
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Container-title:Journal of Infrared and Millimeter Waves
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language:en
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Short-container-title:Journal of Infrared and Millimeter Waves
Author:
YU Jie,WANG Chong,YANG Zhou,CHEN Xiao-Shuang,YANG Yu
Publisher
China Science Publishing & Media Ltd.
Subject
Atomic and Molecular Physics, and Optics