Author:
Liu Qing,Yagishita Atsushi,Kumar Arvind,Loubet Nicolas,Yamamoto Toyoji,Kulkarni Pranita,Monsieur Frederic,Khakifirooz Ali,Ponoth Shom,Cheng Kangguo,Haran Bala,Vinet Maud,Cai Jin,Khare Prasanna,Monfray Stephane,Boeuf Frederic,Mehta Sanjay,Kuss James,Leobandung Effendi,Hane Masami,Bu Huiming,Ishimaru Kazunari,Skotnicki Thomas,Kleemeier Walter,Takayanagi Mariko,Hook Terence,Khare Mukesh,Luning Scott,Doris Bruce,Sampson Ron
Abstract
We report fully-depleted UTBB devices with a gate length (LG) of 25nm and BOX thickness (TBOX) at 25nm, fabricated with a 22nm technology ground rule, featuring conventional gate first high-K/metal and raised source/drain (RSD) process. Competitive drive currents are achieved. Effective Vt modulation is observed with back bias (Vbb) and different ground plane (GP) polarity. Excellent local Vt variation is demonstrated. A functional UTBB 0.108μm2 6-T SRAM is reported with Vdd down to 0.4V. We also present simulation studies that suggest UTBB device has superior scalability compared with thick BOX ETSOI device, thanks to better short channel effect (SCE) control.
Publisher
The Electrochemical Society
Cited by
3 articles.
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