Monitoring the Physicochemical Degradation of Polishing Pad Soaked in Hydrogen Peroxide during Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

Monitoring the Physicochemical Degradation of Polishing Pad Soaked in Hydrogen Peroxide during Chemical Mechanical Polishing

Published:2018 Issue:2 Volume:7 Page:P77-P81
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Shin Cheolmin,Chung Hyunjae,Kim Eungchul,Hong Seokjun,Kwak Donggeon,Jin Yinhua,Kulkarni Atul,Kim Taesung^ORCID

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Davarik B. Koburger C. Schulz R. Warnock J. Furukawa T. Jost M. Taur Y. Schwittek W. DeBrosse J. Kerbaugh M. , in “Electron Devices Meeting, 1989. IEDM'89. Technical Digest., International”, p. 61. IEEE, 1989.

2. Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

3. Influence of oxides on friction during Cu CMP

4. Effect of hydrogen peroxide on oxidation of copper in CMP slurries containing glycine and Cu ions

5. Quantitative analysis of physical and chemical changes in CMP polyurethane pad surfaces

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Viscoelastic Characteristics on the Real Contact Area of Polishing Pad Surface;ECS Journal of Solid State Science and Technology;2024-04-01

2. Development of Novel Conditioning Method Using Thermal Shape Memory Characteristics of Polyurethane CMP Pad;ECS Journal of Solid State Science and Technology;2024-03-15

3. Recent developments and applications of chemical mechanical polishing;The International Journal of Advanced Manufacturing Technology;2020-07