Direct Bonding Mechanism of ALD-Al2O3Thin Films-Reference-Cited by-同舟云学术

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Direct Bonding Mechanism of ALD-Al2O3Thin Films

Published:2015 Issue:5 Volume:4 Page:P171-P175
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Beche E.,Fournel F.,Larrey V.,Rieutord F.,Morales C.,Charvet A.-M,Madeira F.,Audoit G.,Fabbri J.-M.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effects

2. New physics mechanisms enabled by advanced SOI CMOS engineering

3. SOI MOSFETs with Buried Alumina: Thermal and Electrical Aspects

4. Bonding of ALD Alumina for Advanced SOI Substrates

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of oxidant sources on carbon-related impurities in ALD-Al₂O₃ for solid-state devices;Applied Physics Express;2023-09-01

2. Numerical and experimental crossed analysis of coated nanostructures through nanoindentation;International Journal of Mechanical Sciences;2023-05

3. Room-temperature bonding of Al2O3 thin films deposited using atomic layer deposition;Scientific Reports;2023-03-03

4. Surface activated bonding of ALD Al₂O₃ films;Japanese Journal of Applied Physics;2023-02-27

5. Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition;Journal of Vacuum Science & Technology A;2022-12

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