New physics mechanisms enabled by advanced SOI CMOS engineering-Reference-Cited by-同舟云学术

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New physics mechanisms enabled by advanced SOI CMOS engineering

Published:2004-12 Issue: Volume:114-115 Page:9-14
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Cristoloveanu Sorin

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Characterization of Silicon-On-Insulator Materials and Devices;Cristoloveanu,1995

2. Silicon-On-Insulator Technology: Materials to VLSI;Colinge,2004

3. Device scaling limits of Si MOSFETs and their application dependencies

4. Frontiers of silicon-on-insulator

5. S. Cristoloveanu, in: H.R. Huff, L. Fabry, S. Kishino (Eds.), Semiconductor Silicon 2002, Pennington, USA, Electrochem. Soc. Proc. PV-2002-2 (2002) 328.

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1. Formation of Ultra-Shallow Junctions;Reference Module in Materials Science and Materials Engineering;2016

2. Direct Bonding Mechanism of ALD-Al2O3Thin Films;ECS Journal of Solid State Science and Technology;2015

3. Direct Bonding Mechanism of ALD-Al2O3 Thin Films;ECS Transactions;2014-08-14

4. Guest editorial for the special issue on modeling of high-frequency silicon transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2014-03-28

5. A comprehensive review on microwave FinFET modeling for progressing beyond the state of art;Solid-State Electronics;2013-02

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