Author:
Beche Elodie,Fournel Frank,Larrey Vincent,Rieutord François,Morales Christophe,Charvet Anne-Marie,Madeira Florence,Audoit Guillaume,Fabbri Jean-Marc
Abstract
Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al2O3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.
Publisher
The Electrochemical Society
Cited by
3 articles.
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1. Surface activated bonding of aluminum oxide films at room temperature;Scripta Materialia;2021-01
2. Thick-film silicon-on-insulator wafers preparation and properties;Handbook of Silicon Based MEMS Materials and Technologies;2020
3. Thick-Film SOI Wafers;Handbook of Silicon Based MEMS Materials and Technologies;2015