1. Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET’s at the 25nm channel length generation;Wong;IEDM Tech Dig,1998
2. Applications of aluminium nitride films deposited by reactive sputtering to silicon-on-insulator materials;Bengtsson;Jpn J Appl Phys,1996
3. Deep-submicrometer channel design in silicon-on-insulator (SOI) MOSFET’s;Su;IEEE Electron Dev Lett,1994
4. Electrical characterization of SOI materials and devices;Cristoloveanu,1995
5. Oshima K, Cristoloveanu S, Guillaumot B, Carval GL, Iwai H, Mazure C, et al. Replacing the BOX with buried alumina: improved thermal dissipation in SOI MOSFETs. In: Electrochem Soc Proc Series PV 2003–05. Pennington, NJ, 2003. p. 45.