Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2-Reference-Cited by-同舟云学术

Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2

Published:2011 Issue:8 Volume:158 Page:G178
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Zhang Rui,Iwasaki Takashi,Taoka Noriyuki,Takenaka Mitsuru,Takagi Shinichi

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, T. Numata, K. Usuda, Y. Moriyama, S. Nakaharai, J. Koga, and A. Tanabe et al. , Tech. Dig. - Int. Electron Devices Meet., 2003, 57.

2. Electrical characterization of germanium p-channel MOSFETs

3. P. Zimmerman, G. Nicholas, B. De. Jaeger, B. Kaczer, A. Stesmans, L. -Å. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, and G. Winderickx et al. , Tech. Dig. - Int. Electron Devices Meet., 2006, 655.

4. D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat , Tech. Dig. - Int. Electron Devices Meet., 2007, 723.

5. T. Yamamoto, Y. Yamashita, M. Harada, N. Taoka, K. Ikeda, K. Suzuki, O. Kiso, N. Sugiyama, and S. Takagi , Tech. Dig. - Int. Electron Devices Meet., 2007, 1041.

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of electron energy distributions on the electron density in nitrogen inductively coupled plasmas;Plasma Sources Science and Technology;2022-10-01

2. Nitriding process for next-generation semiconductor devices by VHF (162 MHz) multi-tile push-pull plasma source;Applied Surface Science;2020-03

3. Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process;IEEE Transactions on Electron Devices;2019-12

4. Comparative Investigation of Interfacial Characteristics between HfO₂/Al₂O₃ and Al₂O₃/HfO₂ Dielectrics on AlN/p-Ge Structure;Korean Journal of Materials Research;2019-08-31

5. Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process;ACS Applied Electronic Materials;2019-02-19