Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory-Reference-Cited by-同舟云学术

Influence of the Interconnection Line Resistance and Performance of a Resistive Cross Bar Array Memory

Published:2010 Issue:10 Volume:157 Page:G211
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kim Gun Hwan,Kim Kyung Min,Seok Jun Yeong,Lee Min Hwan,Song Seul Ji,Hwang Cheol Seong

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Identification of a determining parameter for resistive switching of TiO2 thin films

2. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

3. Reproducible resistance switching in polycrystalline NiO films

4. Electrical observations of filamentary conductions for the resistive memory switching in NiO films

5. Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

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