Characteristics of Resistive Switching of SRO/SrZrO3/Pt Stack Processed at Full Room Temperature
Author:
Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s13391-020-00257-6.pdf
Reference17 articles.
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3. Lin, S.Q., Wu, N.J., Ignativ, A.: Electric-pulse-induced reversible resistance change effect in magnetoresistive films. Appl. Phys. Lett. 76, 2749 (2000)
4. Waser, R., Dittmann, R., Staikov, G., Szot, K.: Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632 (2009)
5. Borghetti, J., Snider, G.S., Kuekes, P.J., Yang, J.J., Stewart, D.R., Williams, R.S.: Memristive’ switches enable ‘stateful’ logic operations via material implication. Nat. 464, 873 (2010)
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