Charge Trapping Properties of Silicon Carbonitride Storage Layers for Nonvolatile Memories

Abstract

We studied the programming and erasing characteristics and charge retention characteristics of memory capacitors with a blocking oxide-SiCN-tunneling oxide stacked film. The SiCN memory capacitor yielded a high erasing speed, which was attributed to high-speed hole trapping and the low dielectric constant of the SiCN film. The life time of the charge retention test at 85 ˚C on the SiCN memory capacitors was estimated to be long enough for the nonvolatile memory application.