Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films
Author:
Affiliation:
1. Tokai University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E100.C/7/E100.C_662/_pdf
Reference30 articles.
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2. [2] F.R. Libsch and M.H. White, “Charge transport and storage of low programming voltage SONOS/MONOS memory devices,” Solid-State Electronics, vol.33, no.1, pp.105-126, Jan. 1990. 10.1016/0038-1101(90)90017-9
3. [3] S. Minami and Y. Kamigaki, “New scaling guidelines for MNOS nonvolatile memory devices,” IEEE Trans. Electron Devices, vol.38, no.11, pp.2519-2526, Nov. 1991. 10.1109/16.97417
4. [4] S. Minami and Y. Kamigaki, “A novel MONOS nonvolatile memory device ensuring 10-year data retention after 107 erase/write cycles,” IEEE Trans. Electron Devices, vol.40, no.11, pp.2011-2017, Nov. 1993. 10.1109/16.239742
5. [5] M.L. French, C.-Y. Chen, H. Sathianathan, and M.H. White, “Design and scaling of a SONOS multidielectric device for nonvolatile memory applications,” IEEE Trans. Compon. Packag. Manuf. Technol., vol.17, no.3, pp.390-397, Sept. 1994. 10.1109/95.311748
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1. Hole trapping capability of silicon carbonitride charge trap layers;The European Physical Journal Applied Physics;2020-07
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