Analysis of Hydrogen Content in Plasma Silicon Nitride Film-Reference-Cited by-同舟云学术

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Analysis of Hydrogen Content in Plasma Silicon Nitride Film

Published:1980-08-01 Issue:8 Volume:127 Page:1853-1854
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Yoshimi Takeo¹,Sakai Hideo¹,Tanaka Keizo¹

Affiliation:

1. Computer Development Laboratories, Limited, Kodaira, Tokyo, Japan

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2130015/pdf

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2. Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics;Japanese Journal of Applied Physics;2016-03-16

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4. Low-temperature Deposition of Reactively-sputtered SiN_x Films Applicable to TSV Process;IEEJ Transactions on Electronics, Information and Systems;2015

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