Pathway to Depositing Device‐Quality 50°C Silicon Nitride in a High‐Density Plasma System-Reference-Cited by-同舟云学术

Pathway to Depositing Device‐Quality 50°C Silicon Nitride in a High‐Density Plasma System

Published:1999-06-01 Issue:6 Volume:146 Page:2254-2257
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Farber David G.¹,Bae Sanghoon²,Okandan Murat²,Reber Douglas M.¹,Kuzma Terence²,Fonash Stephen J.²

Affiliation:

1. Motorola Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721, United States of America

2. Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802, United States of America

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1391923/pdf

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