Effect of DC Bias Voltage on the Characteristics of Low Temperature Silicon–Nitride Films Deposited by Internal Linear Antenna Inductively Coupled Plasma Source-Reference-Cited by-同舟云学术

Effect of DC Bias Voltage on the Characteristics of Low Temperature Silicon–Nitride Films Deposited by Internal Linear Antenna Inductively Coupled Plasma Source

Published:2010-05-20 Issue:5 Volume:49 Page:056505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gweon Gwang Ho,Lim Jong Hyeuk,Hong Seung Pyo,Yeom Geun Young

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

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4. The preparation, properties and applications of silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

5. Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films

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