Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate-Reference-Cited by-同舟云学术

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Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

Published:2014 Issue:8 Volume:3 Page:P285-P292
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Alassaad K.,Vivona M.,Soulière V.,Doisneau B.,Cauwet F.,Chaussende D.,Giannazzo F.,Roccaforte F.,Ferro G.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Saddow S. E. Agarwal A. K. , Advances in Silicon Carbide Processing and Applications (Artech House, Inc, Norwood, MA, 2004).

2. Fabrication and Characterization of 3C-SiC-Based MOSFETs

3. MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001)

4. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

5. 3C-SiC Film Growth on Si Substrates

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2. Towards Vertical Schottky Diodes on Bulk Cubic Silicon Carbide (3c-Sic);SSRN Electronic Journal;2022

3. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology;Materials;2021-10-05

4. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24

5. Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy;Advanced Electronic Materials;2020-01-15

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