Towards Vertical Schottky Diodes on Bulk Cubic Silicon Carbide (3c-Sic)-Reference-Cited by-同舟云学术

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Towards Vertical Schottky Diodes on Bulk Cubic Silicon Carbide (3c-Sic)

Published:2022 Issue: Volume: Page:
ISSN:1556-5068
Container-title:SSRN Electronic Journal
language:en
Short-container-title:SSRN Journal

Author:

Roccaforte Fabrizio,Greco Giuseppe,Fiorenza Patrick,Di Franco Salvatore,Giannazzo Filippo,La Via Francesco,Zielinski Marcin,Mank Hugues,Jokubavicius Valdas,Yakimova Rositsa

Publisher

Elsevier BV

Subject

General Earth and Planetary Sciences,General Environmental Science

Reference48 articles.

1. Fundamentals of Silicon Carbide Technology

2. SiC Material Properties;G Pensl;SiC Materials and Devices,2006

3. Recent advances in 4H-SiC epitaxy for high-voltage power devices

4. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

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