Fluid Pressures and Pad Topography in Chemical Mechanical Polishing-Reference-Cited by-同舟云学术

Fluid Pressures and Pad Topography in Chemical Mechanical Polishing

Published:2005 Issue:5 Volume:152 Page:G391
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Borucki Leonard J.,Ng Sum Huan,Danyluk Steven

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. J.L. Levert , Ph.D Thesis, Georgia Institute of Technology, Atlanta, GA (1997).

2. L. Shan , Ph.D. Thesis, Georgia Institute of Technology, Atlanta, GA (2000).

3. Mechanism for Subambient Interfacial Pressures While Polishing With Liquids

4. Interfacial Fluid Mechanics and Pressure Prediction in Chemical Mechanical Polishing

5. R. Hight , M.S. Thesis, Georgia Institute of Technology, Atlanta, GA (2002).

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