Interfacial Fluid Mechanics and Pressure Prediction in Chemical Mechanical Polishing
Author:
Shan Lei1, Levert Joseph1, Meade Lorne1, Tichy John2, Danyluk Steven1
Affiliation:
1. The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0405 2. Department of Mechanical Engineering, Aeronautical Engineering and Mechanics, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
Abstract
This paper reports on the measurement of fluid (water) pressure distribution at a soft (polyurethane) pad/steel interface. The distribution of the interfacial fluid pressure has been measured with a specially-designed fixture over the typical range of normal loads and velocities used in the chemical mechanical polishing/planarization of silicon wafers. The results show that, for most cases, the leading two-thirds of the fixture exhibits a subambient pressure, and the trailing third a positive pressure. The average pressure is sub-ambient and may be of the order of 50∼100% of the normal load applied. An analytical model has been developed to predict the magnitude and distribution of the interfacial fluid pressure. The predictions of this model fit the experimental results reasonably well, especially for low sliding velocities. [S0742-4787(00)00902-4]
Publisher
ASME International
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Mechanical Engineering,Mechanics of Materials
Reference10 articles.
1. Pramanik, D., and Weling, M., 1996, “Integration of CMP into Deep Sub-micron Multilevel Metallization Circuits,” Proc. of The First International Symposium on CMP, pp. 47–58. 2. DeJule, R.
, 1997, “CMP Challenges Below a Quarter Micron,” Semicond. Int., 20, No. 13, pp. 54–60. 3. Steigerwald, J. M., Murarka, S. P., and Gutmann, R. J., 1997, Chemical Mechanical Planarization of Microelectronic Materials, Wiley, NY. 4. Levert, J., Baker, R., Mess, F., Salant, R., and Danyluk, S., 1998, “Mechanisms of Chemical-Mechanical Polishing of SiO2 Dielectric on Integrated Circuits,” Tribol. Trans., 41, No. 4, pp. 593–599. 5. Tichy, J., Levert, J., Shan, L., and Danyluk, S., 1998, “Contact Mechanics and Lubrication Hydrodynamics of Chemical Mechanical Polishing,” J. Electrochem. Soc., 146, No. 4, pp. 1523–1528.
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