Amorphous Indium Titanium Zinc Oxide Thin Film Transistor and Impact of Gate Dielectrics on Its Photo-Electrical Properties
Author:
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Low Temperature Solution-Processed InZnO Thin-Film Transistors
2. Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
3. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
4. Effect of Zr addition on ZnSnO thin-film transistors using a solution process
5. Effect of gallium content on bias stress stability of solution-deposited Ga–Sn–Zn–O semiconductor transistors
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3. Influence of Gate Dielectrics on Electrical Characterization of ZnO Schottky Thin Film Transistor;Procedia Computer Science;2020
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