Influence of Gate Dielectrics on Electrical Characterization of ZnO Schottky Thin Film Transistor
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference18 articles.
1. An Investigation on Electrical and Hydrogen Sensing Characteristics of RF Sputtered ZnO Thin-Film With Palladium Schottky Contacts;Rajan;IEEE Sensors Journal,2017
2. Zinc oxide thin film transistors with Schottky source barriers;Ma;Solid-State Electronics,2012
3. Effect of Sputtered ZnO Layers on Behavior of Thin-Film Transistors Deposited at Room Temperature in a Nonreactive Atmosphere;Medina-Montes;Journal of Electronic Materials,2011
4. Dry etch damage and recovery of gallium indium zinc oxide thin-film transistors with etch-back structures;Park;Displays,2012
5. Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature;Chun;Microelectronic Engineering,2011
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1. The impact of multi-layered dielectrics on the electrical performance of ZnO thin-film transistors;Scientific African;2023-07
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